• image of 结型场效应管晶体管>MMBFJ177
  • image of 结型场效应管晶体管>MMBFJ177
MMBFJ177
JFETs Transistors
ON Semiconductor
MMBFJ177 datash
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 结型场效应管晶体管>MMBFJ177
image of 结型场效应管晶体管>MMBFJ177
MMBFJ177
JFETs Transistors
ON Semiconductor
MMBFJ177 datash
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -30V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 20mA
Base Part Number MBFJ177
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
FET Type P-Channel
Transistor Application SWITCHING
Breakdown Voltage 30V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) -20mA
Gate to Source Voltage (Vgs) 30V
FET Technology JUNCTION
Drain to Source Resistance 300Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA
Resistance - RDS(On) 300Ohm
Height 930μm
Length 2.92mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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