• image of 单个绝缘栅双极晶体管>HGTG40N60C3
  • image of 单个绝缘栅双极晶体管>HGTG40N60C3
HGTG40N60C3
Single IGBTs
Harris Corporation
HGTG40N60C3 dat
-
TO-247-3
YES

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image of 单个绝缘栅双极晶体管>HGTG40N60C3
image of 单个绝缘栅双极晶体管>HGTG40N60C3
HGTG40N60C3
Single IGBTs
Harris Corporation
HGTG40N60C3 dat
-
TO-247-3
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Mfr Harris Corporation
Product Status Active
Package Bulk
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Power - Max 291 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Test Condition 480V, 40A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
IGBT Type -
Gate Charge 395 nC
Current - Collector Pulsed (Icm) 300 A
Td (on/off) @ 25°C 47ns/185ns
Switching Energy 850mJ (on), 1mJ (off)
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