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  • image of 绝缘栅双极晶体管模块>MID550-12A4
  • image of 绝缘栅双极晶体管模块>MID550-12A4
： MID550-12A4
： IGBTs Modules
： IXYS
： MID550-12A4 dat
： -
： Y3-DCB
： YES

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image of 绝缘栅双极晶体管模块>MID550-12A4
image of 绝缘栅双极晶体管模块>MID550-12A4
：
MID550-12A4
：
IGBTs Modules
：
IXYS
：
MID550-12A4 dat
：
-
：
Y3-DCB
：
YES
TYPEDESCRIPTION
Factory Lead Time 28 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Surface Mount NO
Number of Pins 10
Supplier Device Package Y3-DCB
Number of Terminals 5
Transistor Element Material SILICON
Package Box
Base Product Number MID550
Mfr IXYS
Product Status Active
Package Shape RECTANGULAR
Manufacturer IXYS Corporation
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
Series --
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature UL RECOGNIZED
Max Power Dissipation 2.75kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Base Part Number MID
Pin Count 7
JESD-30 Code R-XUFM-X5
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 100 ns
Power - Max 2750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 600 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 670A
Current - Collector Cutoff (Max) 21mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 670A
Collector Emitter Saturation Voltage 2.3V
Input Capacitance 26nF
Power Dissipation-Max (Abs) 2750 W
Turn On Time 160 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 400A
Collector Current-Max (IC) 670 A
Turn Off Time-Nom (toff) 690 ns
IGBT Type NPT
Collector-Emitter Voltage-Max 1200 V
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 26nF @ 25V
VCEsat-Max 2.8 V
Height 30mm
Length 110mm
Width 62mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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