• image of 绝缘栅双极晶体管模块>DM2G100SH12AL
  • image of 绝缘栅双极晶体管模块>DM2G100SH12AL
DM2G100SH12AL
IGBTs Modules
MagnaChip Semiconductor
DM2G100SH12AL d
-
-
YES

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image of 绝缘栅双极晶体管模块>DM2G100SH12AL
image of 绝缘栅双极晶体管模块>DM2G100SH12AL
DM2G100SH12AL
IGBTs Modules
MagnaChip Semiconductor
DM2G100SH12AL d
-
-
YES
TYPEDESCRIPTION
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 700000
Maximum Continuous Collector Current (A) 150
Maximum Gate Emitter Leakage Current (uA) 0.2
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 7DM-3
Military No
Mounting Screw
Package Height 29.75(Max)
Package Length 108.5
Package Width 62.5
PCB changed 7
Part Status Obsolete
Pin Count 7
Configuration Dual
Channel Type N
RoHS Status Supplier Unconfirmed
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