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  • image of 绝缘栅双极晶体管模块>APTGT150SK60T1G
  • image of 绝缘栅双极晶体管模块>APTGT150SK60T1G
： APTGT150SK60T1G
： IGBTs Modules
： Microsemi Corporation
： APTGT150SK60T1G
： -
： SP1
： YES

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image of 绝缘栅双极晶体管模块>APTGT150SK60T1G
image of 绝缘栅双极晶体管模块>APTGT150SK60T1G
：
APTGT150SK60T1G
：
IGBTs Modules
：
Microsemi Corporation
：
APTGT150SK60T1G
：
-
：
SP1
：
YES
TYPEDESCRIPTION
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 480W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 225A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 9.2nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
RoHS Status RoHS Compliant
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 主要产品       只生厂材料


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