• image of 绝缘栅双极晶体管模块>APT50GP60JDQ2
  • image of 绝缘栅双极晶体管模块>APT50GP60JDQ2
APT50GP60JDQ2
IGBTs Modules
Microsemi Corporation
APT50GP60JDQ2 d
-
SOT-227-4, miniBLOC
YES

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image of 绝缘栅双极晶体管模块>APT50GP60JDQ2
image of 绝缘栅双极晶体管模块>APT50GP60JDQ2
APT50GP60JDQ2
IGBTs Modules
Microsemi Corporation
APT50GP60JDQ2 d
-
SOT-227-4, miniBLOC
YES
TYPEDESCRIPTION
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Series POWER MOS 7®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 329W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 100A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 525μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 5.7nF
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 200 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 30V
Input Capacitance (Cies) @ Vce 5.7nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
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