• image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
  • image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
MRFG35010AR1
RF MOSFETs Transistors
NXP USA Inc.
MRFG35010AR1 da
-
NI-360HF
YES

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image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
MRFG35010AR1
RF MOSFETs Transistors
NXP USA Inc.
MRFG35010AR1 da
-
NI-360HF
YES
TYPEDESCRIPTION
Package / Case NI-360HF
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 15V
Frequency 3.55GHz
Base Part Number MRFG35010
Current - Test 140mA
Transistor Type pHEMT FET
Gain 10dB
Power - Output 1W
Voltage - Test 12V
RoHS Status ROHS3 Compliant
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