• image of 射频金属氧化物半导体场效应晶体管>D1020UK
  • image of 射频金属氧化物半导体场效应晶体管>D1020UK
D1020UK
RF MOSFETs Transistors
TT Electronics / Semelab
D1020UK datashe
-
-
YES

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image of 射频金属氧化物半导体场效应晶体管>D1020UK
image of 射频金属氧化物半导体场效应晶体管>D1020UK
D1020UK
RF MOSFETs Transistors
TT Electronics / Semelab
D1020UK datashe
-
-
YES
TYPEDESCRIPTION
Material Si
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology DMOS
Maximum Drain Source Voltage (V) 70
Maximum Gate Source Voltage (V) ±20
Maximum VSWR 20(Min)
Maximum Continuous Drain Current (A) 25
Typical Input Capacitance @ Vds (pF) 300(Max)@28V
Maximum Power Dissipation (mW) 389000
Output Power (W) 150
Typical Power Gain (dB) 10(Min)
Maximum Frequency (MHz) 500
Minimum Frequency (MHz) 1
Typical Drain Efficiency (%) 50(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Automotive No
Supplier Package Case DR
Military No
Mounting Screw
Package Height 5.08
Package Length 34.03
Package Width 22.22(Max)
PCB changed 5
Part Status Active
Pin Count 5
Configuration Dual Common Source
Channel Type N
RoHS Status RoHS Compliant
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