• image of 射频金属氧化物半导体场效应晶体管>BLF248,112
  • image of 射频金属氧化物半导体场效应晶体管>BLF248,112
BLF248,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF248,112 data
-
SOT-262A1
YES

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image of 射频金属氧化物半导体场效应晶体管>BLF248,112
image of 射频金属氧化物半导体场效应晶体管>BLF248,112
BLF248,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF248,112 data
-
SOT-262A1
YES
TYPEDESCRIPTION
Package / Case SOT-262A1
Supplier Device Package CDFM4
Packaging Tray
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Current Rating (Amps) 25A
Frequency 225MHz
Transistor Type 2 N-Channel (Dual) Common Source
Gain 11.5dB
Power - Output 300W
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
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