• image of 射频金属氧化物半导体场效应晶体管>BLC10G22XS-570AVTZ
  • image of 射频金属氧化物半导体场效应晶体管>BLC10G22XS-570AVTZ
BLC10G22XS-570AVTZ
RF MOSFETs Transistors
Ampleon USA Inc.
BLC10G22XS-570A
-
SOT-1258-4
YES

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image of 射频金属氧化物半导体场效应晶体管>BLC10G22XS-570AVTZ
image of 射频金属氧化物半导体场效应晶体管>BLC10G22XS-570AVTZ
BLC10G22XS-570AVTZ
RF MOSFETs Transistors
Ampleon USA Inc.
BLC10G22XS-570A
-
SOT-1258-4
YES
TYPEDESCRIPTION
Package / Case SOT-1258-4
Supplier Device Package SOT1258-4
Mfr Ampleon USA Inc.
Package Tray
Product Status Active
Series BLC
Voltage - Rated 65 V
Current Rating (Amps) 2.8μA
Frequency 2.11GHz ~ 2.18GHz
Current - Test 1.15 A
Transistor Type LDMOS (Dual), Common Source
Gain 15.7dB
Power - Output 570W
Noise Figure -
Voltage - Test 30 V
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