: | NVMFD5853NLT1G |
---|---|
: | MOSFETs Transistors Arrays |
: | ON Semiconductor |
: | NVMFD5853NLT1G |
: | - |
: | 8-PowerTDFN |
: | YES |
TYPE | DESCRIPTION |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
Factory Lead Time | 13 Weeks |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 3W |
Terminal Form | FLAT |
Pin Count | 8 |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PDSO-F6 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | 2 N-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Turn-Off Delay Time | 22 ns |
Continuous Drain Current (ID) | 12A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 34A |
Drain-source On Resistance-Max | 0.015Ohm |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 165A |
Avalanche Energy Rating (Eas) | 40 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 1.05mm |
Length | 6.1mm |
Width | 5.1mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |