• image of 金属氧化物半导体场效应晶体管阵列>NVMFD5853NLT1G
  • image of 金属氧化物半导体场效应晶体管阵列>NVMFD5853NLT1G
NVMFD5853NLT1G
MOSFETs Transistors Arrays
ON Semiconductor
NVMFD5853NLT1G
-
8-PowerTDFN
YES

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image of 金属氧化物半导体场效应晶体管阵列>NVMFD5853NLT1G
image of 金属氧化物半导体场效应晶体管阵列>NVMFD5853NLT1G
NVMFD5853NLT1G
MOSFETs Transistors Arrays
ON Semiconductor
NVMFD5853NLT1G
-
8-PowerTDFN
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 3W
Terminal Form FLAT
Pin Count 8
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 10m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 40V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 165A
Avalanche Energy Rating (Eas) 40 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.05mm
Length 6.1mm
Width 5.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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