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  • image of 金属氧化物半导体场效应晶体管阵列>IRF7104TRPBF
  • image of 金属氧化物半导体场效应晶体管阵列>IRF7104TRPBF
： IRF7104TRPBF
： MOSFETs Transistors Arrays
： Infineon Technologies
： IRF7104TRPBF da
： -
： 8-SOIC (0.154, 3.90mm Width)
： YES

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image of 金属氧化物半导体场效应晶体管阵列>IRF7104TRPBF
image of 金属氧化物半导体场效应晶体管阵列>IRF7104TRPBF
：
IRF7104TRPBF
：
MOSFETs Transistors Arrays
：
Infineon Technologies
：
IRF7104TRPBF da
：
-
：
8-SOIC (0.154, 3.90mm Width)
：
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 250mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -2.3A
Base Part Number IRF7104PBF
Number of Elements 2
Row Spacing 6.3 mm
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 12 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.3A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 10A
Dual Supply Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 100 ns
FET Feature Logic Level Gate
Nominal Vgs -3 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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