• image of 金属氧化物半导体场效应晶体管阵列>IPG20N04S4L08ATMA1
  • image of 金属氧化物半导体场效应晶体管阵列>IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
MOSFETs Transistors Arrays
Infineon Technologies
IPG20N04S4L08AT
-
8-PowerVDFN
YES

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image of 金属氧化物半导体场效应晶体管阵列>IPG20N04S4L08ATMA1
image of 金属氧化物半导体场效应晶体管阵列>IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
MOSFETs Transistors Arrays
Infineon Technologies
IPG20N04S4L08AT
-
8-PowerVDFN
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 54W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
Power - Max 54W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 8.2m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 3ns
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 145 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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