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  • image of 金属氧化物半导体场效应晶体管阵列>DMC4047LSD-13
  • image of 金属氧化物半导体场效应晶体管阵列>DMC4047LSD-13
： DMC4047LSD-13
： MOSFETs Transistors Arrays
： Diodes Incorporated
： DMC4047LSD-13 d
： -
： 8-SOIC (0.154, 3.90mm Width)
： YES

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image of 金属氧化物半导体场效应晶体管阵列>DMC4047LSD-13
image of 金属氧化物半导体场效应晶体管阵列>DMC4047LSD-13
：
DMC4047LSD-13
：
MOSFETs Transistors Arrays
：
Diodes Incorporated
：
DMC4047LSD-13 d
：
-
：
8-SOIC (0.154, 3.90mm Width)
：
YES
TYPEDESCRIPTION
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.8W
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.7 ns
Power - Max 1.3W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7A 5.1A
Gate Charge (Qg) (Max) @ Vgs 19.1nC @ 10V
Rise Time 19.6ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 25.5 ns
Turn-Off Delay Time 34.9 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 4.95mm
Width 3.95mm
RoHS Status ROHS3 Compliant
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