• image of 射频双极性结型晶体管>JANTXV2N4957
  • image of 射频双极性结型晶体管>JANTXV2N4957
JANTXV2N4957
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957 da
-
TO-72-3 Metal Can
YES

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image of 射频双极性结型晶体管>JANTXV2N4957
image of 射频双极性结型晶体管>JANTXV2N4957
JANTXV2N4957
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957 da
-
TO-72-3 Metal Can
YES
TYPEDESCRIPTION
Lifecycle Status IN PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 23 Weeks
Mounting Type Through Hole
Package / Case TO-72-3 Metal Can
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Reference Standard MIL-19500/426
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 10V
Gain 25dB
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB @ 450MHz
RoHS Status Non-RoHS Compliant
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